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Sato, Tatsuhiko
Oyo Butsuri, 92(11), p.684 - 687, 2023/11
Development and promotion of the PHITS code will be introduced.
Yoneda, Yasuhiro
Oyo Butsuri, 91(12), p.729 - 735, 2022/12
It is important to determine whether a sample is a single phase or not in order to improve the quality of ferroelectrics. Therefore, we have succeeded in developing a detection method for trace amounts of segregated phases by using two-body correlation distribution function (PDF) in addition to X-ray diffraction, which has been conventionally used to detect impurities. In the X-ray diffraction pattern of the BaTiO
-BiFeO solid solution, it appears as a single phase with a rhombohedral structure. However, when the PDF was calculated from the obtained diffraction pattern, it was found that not only the component derived from the rhombohedral crystal structure calculated from the average structure but also the BaTiO component was mixed and segregated. By using PDF in this way, it has become possible to detect fine segregation phases on the order of nanoscale.
Tsuchida, Hidetsugu*; Majima, Takuya*; Kai, Takeshi
Oyo Butsuri, 91(9), p.553 - 557, 2022/09
In recent years, basic research has been conducted to understand the biological effects of radiation at the atomic level toward advancing particle beam cancer treatment. Here we show some recent results on the basic process of biomolecular damage caused by ion beams in liquid water. A biomolecular solution target was introduced to the vacuum by a liquid molecular beam or microdroplet method. Secondary ion mass spectrometry was applied to measure the fragments of biomolecules emitted from a target irradiated with an ion beam. For the simulation study using a PHITS code, physical nature of secondary electrons produced by ion beam in water was analyzed. The experimental and simulation research determined the energy range of secondary electrons involved in damaging biomolecules in liquid water caused by ion beams. The damage process by secondary electrons near the ion track is described.
Yoshigoe, Akitaka
Oyo Butsuri Gakaki Hakumaku, Hyomen Butsuri Bunkakai Newsletter, (168), p.52 - 53, 2019/09
When I become a permanent secretary of the Thin Film and Surface Physics Subcommittee of the Japan Society of Applied Physics, I use Newsletter to introduce a part of my research.
Matsuo, Mamoru
Oyo Butsuri, 86(1), p.31 - 35, 2017/01
Spin-current generation by fluid motion is investigated. Spin-rotation coupling emerges in a rotating object and allows the angular momentum conversion from mechanical angular momentum into spins. We predicted that the spin current is mechanically generated along the vorticity gradient of the liquid metal pipe flow. Such spin-mechanical effect is experimentally confirmed by electric voltage generation in liquid metals. The use of the interconversion between spin and mechanical angular momentum opens up a new field of spintronics, where spin and mechanical motion are harmonized.
Imazono, Takashi
Oyo Butsuri, 83(4), p.288 - 292, 2014/04
We have developed a soft X-ray flat-field spectrograph capable to detect soft X-ray emissions in 50-4000 eV with high spectral resolution. The spectrograph in combination with an electron microscope such as transmission electron microscope (TEM) and electron probe micro-analyzer (EPMA) makes it possible to simultaneously perform not only the structural and elemental analyses of such functional materials as lithium-ion batteries and solar cells, but also chemical-bonding states analysis in the nano-scale area. In this article, the development of the soft X-ray flat-field spectrograph and preliminary experimental results measured by the spectrograph installed in EPMA and TEM are described.
Kawachi, Naoki
Oyo Butsuri, 83(4), p.310 - 311, 2014/04
no abstracts in English
Oshima, Takeshi
Oyo Butsuri, 81(3), p.216 - 219, 2012/03
Radiation particles such as electrons, protons, and heavy ions exist in space, and semiconductor device installed in space applications such as artificial satellites show the degradation of their electrical performance, and nondestructive and destructive malfunctions by the incidence of such particles. In this article, first of all, radiation environments in space are introduced and then, radiation effects on semiconductor devices (total ionizing dose effect, displacement damage effect, and single event effects) are explained. In addition, as an example of the displacement damage effect, study of radiation degradation mechanism of triple junction solar cells developed for space applications due to proton/electron irradiation is introduced. Also, as an example of single event effects, the recent study of single event transient in Large Scale Integration (LSI) is explained.
Oka, Kiyoshi; Seki, Takeshi; Nishimura, Akihiko
Oyo Butsuri, 80(12), p.1069 - 1072, 2011/12
A composite-type optical fiberscope was developed for maintenance research and development of nuclear facilities by JAEA. It can coaxially deliver both a high energy laser beam for micro processing and an image from processing targets. Development of minimally invasive laser treatment devices were introduced by use of the composite-type optical fiber scope.
-ray analysis methodOshima, Masumi; Matsuo, Motoyuki*; Shozugawa, Katsumi*
Oyo Butsuri, 80(11), p.948 - 954, 2011/11
The multiple -ray detection method has been proved to be a high-resolution and high-sensitivity method in application to nuclide quantification. The neutron prompt -ray analysis method is successfully extended by combining it with the -ray detection method, which is called Multiple prompt -ray analysis, MPGA. In this review we show the principle of this method and its characteristics. Several examples of its application to environmental samples, especially river sediments in the urban area and sea sediment samples are also described.
Ge
alloy layer studied by real-time photoelectron spectroscopyOgawa, Shuichi*; Hozumi, Hideaki*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Kaga, Toshiteru*; Teraoka, Yuden; Takakuwa, Yuji*
Oyo Butsuri Gakkai Hakumaku, Hyomen Butsuri Bunkakai, Shirikon Tekunoroji Bunkakai Kyosai Tokubetsu Kenkyukai Kenkyu Hokoku, p.67 - 70, 2011/01
The oxidation-enhanced Ge atoms condensation kinetics on an SiGe alloy layer has been investigated by the real-time photoemission spectroscopy using the synchrotron radiation. The SiGe alloy layer was formed with a thermal evaporation method on a p-type Si(001) surface, and this alloy layer was oxidized at Langmuir-type adsorption. During oxidation at 773 KC, it is found that the Ge atoms are not oxidized, only SiO
film is formed on the SiGe alloy layer. Furthermore, the desorption of GeO molecules does not occur during the oxidation of alloy layer. On the other hand, not only Si atoms but also Ge atoms are oxidized at room temperature. This difference can be explained using the unified oxidation model mediated by the point defect generation, namely it is suggested that a lot of vacancies are generated during oxidation of the SiGe alloy layer at 773K and Ge atoms diffuse through these vacancies.
Kamiya, Tomihiro
Oyo Butsuri, 79(3), p.213 - 218, 2010/03
The high-energy ion microbeam technology that controls various kinds of ion beams with the energy of MeV/amu or more at the micro nano level can provide the new fabrication methods making the best use of the feature of the interaction of high-energy ions with materials. It is necessary to advance the material development, the beam technology development, and the processing technology development, under the accumulation of a basic and systematic finding concerning the interaction of the ion beam and the material by collaboration of many scientists in various research fields.
C alloy layer/Si(001) surface under oxide growth and etching conditionsHozumi, Hideaki*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Harries, J.; Teraoka, Yuden; Takakuwa, Yuji*
Oyo Butsuri Gakkai Hakumaku, Hyomen Butsuri Bunkakai, Shirikon Tekunoroji Bunkakai Kyosai Tokubetsu Kenkyukai Kenkyu Hokoku, p.181 - 184, 2010/01
The oxidation kinetics on the SiC alloy layer has been investigated using the real-time XPS measurement. Experiments were performed at the BL23SU of SPring-8. The SiC alloy layer was formed with exposing a p-type Si(001) surface to ethylene, and the SiC alloy layer was oxidized at Langmuir-type adsorption (773 K) and 2D oxide island growth (933 K), respectively. In case of Langmuir-type adsorption, it is found that no carbon atoms are oxidized and carbon concentration at the SiO/Si interface increases. These results indicate the carbon atom condensation occurs, leading to the SiO/SiC/Si layers formation. On the other hand, the carbon concentration decrease by 20% in spite of the etching of 38 Si layers in the 2D oxide island growth. Based on these results, it is found that the diffusion of carbon atoms is occurred due to not only oxide growth but also Si etching.
gate dielectricsHosoi, Takuji*; Okamoto, Gaku*; Kutsuki, Katsuhiro*; Kagei, Yusuke*; Harries, J.; Yoshigoe, Akitaka; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*
Oyo Butsuri Gakkai Hakumaku, Hyomen Butsuri Bunkakai, Shirikon Tekunoroji Bunkakai Kyosai Tokubetsu Kenkyukai Kenkyu Hokoku, p.145 - 148, 2010/01
We developed high quality high-
/Ge gate stacks with reduced leakage current and superior interface quality, which was fabricated by direct deposition of ZrO on Ge substrate and thermal oxidation. Synchrotron radiation photoelectron spectroscopy revealed that thermal oxidation at 823 K caused not only an intermixing between ZrO and Ge but also the formation of GeO at the interlayer. We obtained an equivalent oxide thickness (EOT) of 1.9 nm, and an interface state density of 10
cm
eV
for Au/ZrO/Ge capacitors. Furthermore, we found that the A10
capping on the Zr0 1ayer is effective for decreasing EOT. The interface state density as low as 5.3
10
cmeV was obtained for the AlO/ZrO/Ge stack with 30 min oxidation. The EOT could be reduced to l.6 nm by 10 min oxidation. The leakage current was two orders of magnitude lower than the conventional poly-Si/SiO/Si stack.
Fujii, Yasuhiko; Arai, Masatoshi
Oyo Butsuri, 78(8), p.758 - 764, 2009/08
The multipurpose facility "J-PARC", jointly built by JAEA and KEK, is used for research in a wide variety of scientific fields such as materials and life sciences using neutrons and muons, nuclear and particle physics using kaons and neutrinos, and nuclear transmutation using neutrons. The 8-year construction period is now over and we are entering a new era of user programs operated by J-PARC Center, also jointly organized by JAEA and KEK. Here we describe in details the world's strongest neutron (JSNS) and muon (MUSE) sources available for users worldwide.
Daido, Hiroyuki
Oyo Butsuri, 78(6), p.518 - 522, 2009/06
Recently, a many research groups are performing the studies on ultra-short and ultra-high intensity laser driven particle sources experimentally as well as theoretically. In this report, the author describes mainly their own results including how to make a desired laser plasma for particle acceleration, these mechanisms, the properties of the accelerated particles. The author also describes the real collaboration with the medical people including joint experiment using the particle beam for real therapy, briefly.
Takeda, Masayasu
Oyo Butsuri Gakkai Umoreta Kaimen No X-Sen, Chuseishi Kaiseki Gurupu Dai-1-Kai Koshukai "X-Sen Hansharitsuho Niyoru Hakumaku, Tasomaku No Kaiseki" Tekisuto; X-Sen Hansharitsuho Nyumon, p.58 - 77, 2007/00
X-ray and neutron reflectometries have been now widely used to determine the depth profile of thin films and artificial multilayers. These two techniques give similar information on the internal layered structures. As compared with X-ray, neutron has several advantages: (1) Most materials are transparent for neutrons, (2) The nuclear scattering length (scattering power) for neutrons is different even for adjacent elements in the periodic table, (3) Neutrons are sensitive to the difference of isotopes, (4) Neutrons have the interaction between their spin and the magnetic moments in the materials. In this chapter, a brief introduction of the neutron reflectometry is given as compared with the X-ray reflectometry.
Mizumaki, Masaichiro*; Agui, Akane; Asahi, Toru*
Oyo Butsuri, 75(2), p.227 - 232, 2006/02
no abstracts in English
Utsumi, Wataru; Saito, Hiroyuki; Taniguchi, Takashi*; Aoki, Katsutoshi
Oyo Butsuri, 74(5), p.593 - 596, 2005/05
New method of the single crystal growth of GaN is introduced, which is based on the slow cooling of its melt under high pressure. Applying high pressures above 6 GPa prevented decomposition into Ga and nitrogen and allowed the congruent melt of GaN at high temperature. Using a large volume high pressure-temperature apparatus, high quality single crystals of GaN were successfully synthesized. This technique is also applied for the synthesis of other nitride crystals such as AlN-GaN alloy and InN.
Teraoka, Yuden
Oyo Butsuri, 74(1), p.79 - 80, 2005/01
Contents of presentations in a research field of beam application at the fall meeting of applied physics in Japan were reported to the Japan Society of Applied Physics. They contain up-to-date research results on X-ray technologies, electron microscope technologies, lithography, surface reactions induced by beams, ion beam technologies, electron micro-sources and beam-related new technologies.
